SDNET-NBSD4N3216 - NETAC
22.84
Netac 16GB No Heatsink (1 x 16GB) DDR4 3200MHz SODIMM System Memory
Netac Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.
Each 260-pin DIMM uses gold contact fingers. The SDRAM Unbuffered SODIMM is intended for use as main memory when installed in systems such as mobile personal computers.
Features
- Power Supply: VDD=1.2V (1.14V to 1.26V)
- VDDQ = 1.2V (1.14V to 1.26V)
- VPP - 2.5V (2.375V to 2.75V)
- VDDSPD=2.25V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- On-board I2C serial presence-detect (SPD) EEPROM
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Databus write cyclic redundancy check (CRC)
- Temperature controlled refresh (TCR)
- Command/Address (CA) parity
- Per DRAM Addressability is supported
- 8 bit pre-fetch
- Fly-by topology
- Command/Address latency (CAL)
- Terminated control command and address bus
- PCB: Height 1.18" (30.00mm)
- Gold edge contacts
- RoHS Compliant and Halogen-Free
Memory Capacity
16GB (1 x 16GB)
Memory Type
DDR4
Module Type
SODIMM
Memory Speed
DDR4-3200MHz
Pin Configuration
260-pin
Registered/Unbuffered
Unbuffered
Error Correction
Non-ECC
CL-tRCD-tRP-tRAS
22-22-22-52
Heat Sink
/
Working Voltage
1.2v
Netac Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.
Each 260-pin DIMM uses gold contact fingers. The SDRAM Unbuffered SODIMM is intended for use as main memory when installed in systems such as mobile personal computers.
Features
- Power Supply: VDD=1.2V (1.14V to 1.26V)
- VDDQ = 1.2V (1.14V to 1.26V)
- VPP - 2.5V (2.375V to 2.75V)
- VDDSPD=2.25V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- On-board I2C serial presence-detect (SPD) EEPROM
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Databus write cyclic redundancy check (CRC)
- Temperature controlled refresh (TCR)
- Command/Address (CA) parity
- Per DRAM Addressability is supported
- 8 bit pre-fetch
- Fly-by topology
- Command/Address latency (CAL)
- Terminated control command and address bus
- PCB: Height 1.18" (30.00mm)
- Gold edge contacts
- RoHS Compliant and Halogen-Free
Memory Capacity
16GB (1 x 16GB)
Memory Type
DDR4
Module Type
SODIMM
Memory Speed
DDR4-3200MHz
Pin Configuration
260-pin
Registered/Unbuffered
Unbuffered
Error Correction
Non-ECC
CL-tRCD-tRP-tRAS
22-22-22-52
Heat Sink
/
Working Voltage
1.2v